SK hynix is reportedly making a bold leap in DRAM manufacturing, preparing to ramp its 1c DRAM production to an unprecedented six extreme ultraviolet (EUV) lithography layers.
This move positions the company ahead of rivals like Samsung and sets the groundwork for integrating next-generation High-NA EUV technology.
According to reports from ZDNet Korea, the shift to six EUV layers will redefine industry benchmarks for DDR5 and high-bandwidth memory (HBM) products. EUV lithography, which uses a 13.5-nm wavelength to create ultra-fine circuitry, has traditionally been used sparingly alongside deep ultraviolet (DUV) layers. By going all-in on EUV for 1c DRAM, SK hynix aims to achieve higher yields, improved performance, and greater profitability.
While 1c DRAM has yet to appear in mainstream consumer memory, SK hynix is already evaluating potential applications, including DDR5 modules with larger capacities and significantly faster speeds. The company’s long-term strategy involves making EUV a core part of its future 1d and 0a DRAM generations, paving the way for High-NA EUV adoption. This will enable the production of denser, faster, and more power-efficient memory solutions.
With 1c DRAM expected to debut prominently in HBM4, the upgrade could deliver substantial performance gains across AI, data center, and high-performance computing workloads. In short, SK hynix’s aggressive EUV expansion is not just about keeping up with the competition-it’s about reshaping the DRAM landscape entirely.