The Samsung Galaxy S26 Ultra is shaping up to be more than just an incremental upgrade – it’s getting a serious speed and efficiency boost. According to reliable tipster Ice Universe, Samsung’s next flagship will pack cutting-edge low-power double data rate 5X (LPDDR5X) memory capable of hitting blazing speeds of up to 10.7 gigabits per second (Gbps). 
This next-gen RAM will reportedly come from Micron and is built on the company’s advanced 1γ (1-gamma) DRAM process.
For comparison, the Galaxy S25 Ultra – like most premium Android devices running on Qualcomm’s Snapdragon Elite Mobile Platform – uses LPDDR5X memory made with Micron’s older 1β (1-beta) process, topping out at 9.6 Gbps
. The new 1γ version not only delivers faster performance but also slashes power consumption by up to 20%, meaning the S26 Ultra should last longer on a single charge.
Micron touts its 1γ LPDDR5X as the fastest RAM in the industry, ideal for AI-heavy workloads and data-intensive apps, ensuring snappier responses and quicker results. The chip is also impressively compact at just 0.61mm thick, potentially allowing Samsung to squeeze in a larger battery, bigger camera sensor, or other upgraded components.
There’s also speculation that Samsung might use its own 10.7Gbps LPDDR5X DRAM, based on a 12nm process, which offers similar speed and efficiency advantages. Last year’s Galaxy S25 series saw a mix of Micron and Samsung memory due to reported overheating concerns, but these issues are said to have been resolved. A June report indicated Samsung was testing Micron’s LPDDR5X for the Galaxy S26 lineup, so buyers can expect top-tier performance regardless of the supplier.
On top of the RAM upgrade, the Galaxy S26 Ultra is expected to sport a refined, slimmer design. With the Galaxy S25 Ultra already performing strongly in the market, this combination of improved speed, efficiency, and design could make the S26 Ultra one of Samsung’s most compelling releases yet.