Samsung’s upcoming Galaxy S26 Edge has made a surprise appearance on Geekbench, confirming that it will pack Qualcomm’s next flagship chip – the Snapdragon 8 Elite 2.
While recent chatter has mostly been about the phone’s battery life, this benchmark leak shifts the spotlight to raw performance.
Listed under the model number SM-S947U (likely the U.S. version), the S26 Edge is already showing serious power in its pre-production form. The Snapdragon 8 Elite 2 will feature an eight-core CPU with two prime cores at 4.74 GHz and six performance cores at 3.63 GHz – both higher than last year’s Elite’s 4.32 GHz and 3.53 GHz clocks. Early reports suggested 4.6 GHz for the standard version and 4.74 GHz for the Galaxy variant, and this leak seems to confirm that.
On Geekbench, the S26 Edge scored 3,393 in single-core and 11,515 in multi-core tests – that’s roughly an 8% boost in single-core and a 22% jump in multi-core over the S25 Edge. These are early numbers, so expect even better results once the final consumer model launches.
While these performance gains make the S26 Edge look like a pocket-sized supercomputer, concerns remain over whether such high clocks can be cooled effectively in a slim design. For some, the “Edge” name brings nostalgia for past designs, but others worry it now means thin phones with reduced battery life and thermal limits. Still, for gamers and power users, these numbers could be a real upgrade, especially with more demanding mobile titles on the horizon.
The Snapdragon 8 Elite 2 is set to launch next month, and if these leaks hold true, the S26 Edge could be one of the fastest – and hottest – devices of 2025.