SK hynix Solves Smartphone Overheating With 3.5x Thermal Boost in Mobile DRAM

SK hynix has taken a bold step forward in solving one of the biggest bottlenecks for smartphones running on-device AI: heat.

The company announced it has started supplying a new generation of mobile DRAM that dramatically improves thermal performance, thanks to an industry-first High-K Epoxy Molding Compound infused with Alumina.

Unlike conventional materials, this compound delivers 3.5x better thermal conductivity, cutting vertical heat resistance by nearly half. That’s a big deal because most modern smartphones stack DRAM directly on top of the chipset to save space and boost data transfer speeds – an efficient design, but one that often leads to overheating under heavy AI or gaming workloads. When heat builds up, performance throttles, draining both power and user experience.

SK hynix says this new material significantly reduces those issues, paving the way for smoother multitasking, extended battery life, and more consistent performance. In practice, that means future flagship phones won’t just be faster – they’ll stay fast without cooking themselves in the process.

Lee Gyu-jei, head of Package Product Development, described the breakthrough as more than a technical tweak: “It’s a meaningful achievement that addresses real frustrations high-performance smartphone users face. With this innovation, we’re securing our leadership in next-generation mobile DRAM.”

Though SK hynix hasn’t confirmed an exact launch window, industry watchers suggest we may start seeing this memory in flagship smartphones as early as 2026. Considering the growing demand for AI-driven features, this could be one of the most critical hardware upgrades in years.